JPH0465145B2 - - Google Patents
Info
- Publication number
- JPH0465145B2 JPH0465145B2 JP6933686A JP6933686A JPH0465145B2 JP H0465145 B2 JPH0465145 B2 JP H0465145B2 JP 6933686 A JP6933686 A JP 6933686A JP 6933686 A JP6933686 A JP 6933686A JP H0465145 B2 JPH0465145 B2 JP H0465145B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- gas
- film
- carbide film
- microcrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 29
- 239000007789 gas Substances 0.000 claims description 26
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- 239000002994 raw material Substances 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 6
- 238000010790 dilution Methods 0.000 claims description 4
- 239000012895 dilution Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 35
- 239000000463 material Substances 0.000 description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002003 electron diffraction Methods 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Landscapes
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6933686A JPS62224674A (ja) | 1986-03-26 | 1986-03-26 | 微結晶炭化珪素膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6933686A JPS62224674A (ja) | 1986-03-26 | 1986-03-26 | 微結晶炭化珪素膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62224674A JPS62224674A (ja) | 1987-10-02 |
| JPH0465145B2 true JPH0465145B2 (en]) | 1992-10-19 |
Family
ID=13399606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6933686A Granted JPS62224674A (ja) | 1986-03-26 | 1986-03-26 | 微結晶炭化珪素膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62224674A (en]) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2692091B2 (ja) * | 1987-10-31 | 1997-12-17 | 株式会社日本自動車部品総合研究所 | 炭化ケイ素半導体膜およびその製造方法 |
| US5465680A (en) * | 1993-07-01 | 1995-11-14 | Dow Corning Corporation | Method of forming crystalline silicon carbide coatings |
-
1986
- 1986-03-26 JP JP6933686A patent/JPS62224674A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62224674A (ja) | 1987-10-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0322615B1 (en) | Method of growing a single crystalline beta-silicon carbide layer on a silicon substrate | |
| EP0417942B1 (en) | Manufacture of polycrystalline silicon thin films and of transistors therefrom | |
| CN108166056A (zh) | 一种能够有效降低碳化硅外延表面缺陷的生长方法 | |
| US5427054A (en) | Method of making a diamond film | |
| JPH0465145B2 (en]) | ||
| JPH04298023A (ja) | 単結晶シリコン薄膜の製造方法 | |
| JP2003209059A (ja) | エピタキシャルシリコン単結晶ウェーハ並びにその製造方法 | |
| MOHRI et al. | Effect of SiF 4/SiH 4/H 2 Flow Rates on Film Properties of Low-Temperature Polycrystalline Silicon Films Prepared by Plasma Enhanced Chemical Vapor Deposition | |
| CN115074825A (zh) | 碳化硅外延结构、脉冲式生长方法及其应用 | |
| JPH07221026A (ja) | 高品質半導体薄膜の形成方法 | |
| JP3116403B2 (ja) | 薄膜トランジスタの製造方法 | |
| JPH0554692B2 (en]) | ||
| JPH06168883A (ja) | 多結晶シリコン薄膜の製造方法 | |
| JPH01172295A (ja) | エピタキシャル成長によるシリコン結晶薄膜の製造方法 | |
| JPH06168882A (ja) | 多結晶シリコン薄膜の製造方法 | |
| JPS63196082A (ja) | 太陽電池の製造方法 | |
| KR100233146B1 (ko) | 다결정 실리콘의 제조 방법 | |
| JPS62154621A (ja) | 非晶質炭化珪素膜の製造方法 | |
| JPS63222096A (ja) | 単結晶薄膜の製法 | |
| CN117552102A (zh) | 碳化硅外延及其生长缺陷控制方法 | |
| JPS63157872A (ja) | 半導体薄膜の製法 | |
| JPH03101123A (ja) | 非晶質系半導体膜の製造法 | |
| JPH02202017A (ja) | シリコン単結晶薄膜の製造方法 | |
| JPH02202018A (ja) | 多結晶シリコン薄膜の製造方法 | |
| CN120250152A (zh) | 改善碳化硅外延片表面微坑缺陷的外延方法及半导体器件 |